gallium

Differences in n-type doping efficiency between Al- and Ga-ZnO films

A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO wurtzite structure is presented. Both cations …

M. Gabás, A. Landa-Cánovas, J. L. Costa-Krämer, F. Agulló-Rueda, A. R. González-Elipe, P. Díaz-Carrasco, J. Hernández-Moro, I. Lorite, P. Herrero, P. Castillero, A. Barranco, J. R. Ramos-Barrado

Highly conductive Ga-doped ZnO thin films deposited onto Si wafers: Interface characterization

Undoped ZnO and Ga:ZnO films deposited onto Si wafer substrates have been prepared and characterized in order to investigate the …

E. Ochoa, M. Gabás, S. Bijani, S. Palanco, A. R. Landa-Cánovas, P. Herrero, F. Agulló-Rueda, P. Díaz-Carrasco, J. R. Ramos-Barrado

High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering

Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron sputtering onto single crystal Si (100) substrates equivalent to …

M. Gabás, P. Díaz-Carrasco, F. Agulló-Rueda, P. Herrero, A. R. Landa-Cánovas, J. R. Ramos-Barrado