# Raman Spectroscopy of Wurtzite InN Films Grown on Si

### Abstract

We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550°C. The Raman spectra show well defined peaks at 443, 475, 491 and 591 cm$^{-1}$, which correspond to the $A_1$(TO), $E_1$(TO), $E_2^\textrm{high}$, and $A_1$(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface the $A_1$(TO) and $E_1$(TO) peaks are very weak, indicating that the films grow along the hexagonal $c$-axis. For a growth temperature of 500°C, the $E_2^\textrm{high}$ peak has a full width at half maximum of 7 cm$^{-1}$, which is comparable to the value reported for wurtzite InN films grown on sapphire.

Type
Publication
Solid State Comm. 115, 19–21 (2000)

Full citation:
F. Agulló-Rueda, E. E. Mendez, B. Bojarczuk, and S. Guha, “Raman Spectroscopy of Wurtzite InN Films Grown on Si,” Solid State Comm. 115, 19–21 (2000). DOI: 10.1016/S0038-1098(00)00132-0