Growth of out-of-plane standing MoTe$_{2(1-x)}$Se$_{2x}$/MoSe$_2$ composite flake films by sol-gel nucleation of MoO$_y$ and isothermal closed space telluro-selenization

Abstract

This study describes the sol-gel processing of MoO$_y$ on Si (100) to subsequently achieve out-of-plane MoTe$_{2}$/MoSe$_{2}$ flake composite films by an isothermal closed space vapor transformation. The oxide precursor films have been prepared from a Mo isopropoxide solution in isopropanol and acid catalysis induced by HCl. Thermal annealing at 200, 400 and 600°C enhanced the condensation after xerogel formation. An x-ray absorption analysis demonstrates that films condensed at 200°C are at an intermediate chemical state between MoO$_{3}$ and MoO$_{2}$. To achieve MoTe$_{2}$/MoSe$_{2}$ composite films, the precursor oxide films were reduced in H$_{2}$ and exposed to the chalcogenides by isothermal closed space vapor transport at 600°C. The multilayered nanocomposite films grow with an out-of-plane flake-like structure and an evident integration of Se in the MoTe$_{2}$ phase according to a MoTe$_{2(1-x)}$Se$_{2x}$ alloy, with an estimation of $x$ of 0.25. The alloy and the orientation of the flakes is consistent with the bands present in the Raman spectrum. These films are attractive for applications requiring high surface area interfaces favoring gas or ion exchange reactions with transition metal dichalcogenides.

Publication
Appl. Surf. Sci. 546, 149076 (2021)

Full citation:
A. Fernández García, V. Torres-Costa, O. de Melo, F. Agulló-Rueda, G. R. Castro and M. Manso Silvan, “Growth of out-of-plane standing MoTe$_{2(1-x)}$Se$_{2x}$/MoSe$_2$ composite flake films by sol-gel nucleation of MoO$_y$ and isothermal closed space telluro-selenization,” Appl. Surf. Sci. 546, 149076 (2021). DOI: 10.1016/j.apsusc.2021.149076

Related