# temperature

## Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at $1000^\circ$C. Raman and photoluminescence spectra show substantial damage of the …

## Laser Heating in Porous Silicon Studied by Micro-Raman Spectroscopy

We have measured the temperature rise in nanoporous silicon under strong illumination. A green laser beam was focused with a microscope objective on porous silicon films with porosities between 55% and 80%. The Raman spectrum was measured for power …

## Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

We have measured depth-resolved microphotoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. The PL emission band gets stronger, blueshifts, and narrows at the high porosity …

## Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence

A combination of Raman scattering and cathodoluminescence techniques has been used to study the spatial distribution of Te precipitates in the volume of CdTe wafers. Starting with the as‐grown crystals with random distribution of precipitates over …

## Elimination of Te Precipitates from CdTe Wafers

Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has been …