*Carbon* **123**, 334--343 (2017)
We have studied the near-surface damage in a diamond crystal caused by irradiation with swift boron ions and its healing after high-temperature annealing. A diamond crystal was irradiated with 9-MeV $^{11}$B$^{3+}$ ions with fluence values between $1 …
*Phys. Status Solidi A* **206**(6), 1109--1116 (2009)
The formation of buried heavily damaged and amorphous layers by a variety of swift-ion irradiations (F at 22MeV, O at 20MeV, and Mg at 28MeV) on congruent LiNbO$_3$ has been investigated. These irradiations assure that the electronic stopping power …
In the present work, $a$-C:H films have been grown from argon/methane gas mixtures by Electron Cyclotron Resonance Chemical Vapour Deposition (ECRCVD). The effect of the application of a dc bias voltage to the silicon substrate material on the …
The effects of high-energy silicon (5 MeV, 7.5 MeV and 30 MeV) irradiations have been optically investigated by the dark-mode m-lines technique. In all cases, an optically isotropic homogeneous layer is created after a certain critical fluence that …
The refractive-index profiles induced by high-energy (5 MeV, 7.5 MeV) silicon irradiation in LiNbO$_3$ have been systematically determined as a function of ion fluence in the range $10^{13}$–$10^{15}$ cm$^{-2}$. At variance with irradiations at lower …