amorphous

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at $1000^\circ$C. Raman and photoluminescence spectra show substantial damage of the …

Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions

We have studied the near-surface damage in a diamond crystal caused by irradiation with swift boron ions and its healing after high-temperature annealing. A diamond crystal was irradiated with 9-MeV $^{11}$B$^{3+}$ ions with fluence values between $1 …

Giant enhancement of material damage associated to electronic excitation during ion irradiation: The case of LiNbO$_3$

The structural damage induced by ion irradiation on dielectric materials and associated device degradation has been, so far, explained on the basis of collisional processes mostly ignoring the electronic excitation. Recent work, focused on lithium …

Buried amorphous layers by electronic excitation in ion-beam irradiated lithium niobate: structure and kinetics

The formation of buried heavily damaged and amorphous layers by a variety of swift-ion irradiations (F at 22MeV, O at 20MeV, and Mg at 28MeV) on congruent LiNbO$_3$ has been investigated. These irradiations assure that the electronic stopping power …

DC substrate bias effects on the physical properties of hydrogenated amorphous carbon films grown by plasma-assisted chemical vapour deposition

In the present work, $a$-C:H films have been grown from argon/methane gas mixtures by Electron Cyclotron Resonance Chemical Vapour Deposition (ECRCVD). The effect of the application of a dc bias voltage to the silicon substrate material on the …

Optical investigation of the propagation of the amorphous--crystalline boundary in ion-beam irradiated LiNbO$_3$

The effects of high-energy silicon (5 MeV, 7.5 MeV and 30 MeV) irradiations have been optically investigated by the dark-mode m-lines technique. In all cases, an optically isotropic homogeneous layer is created after a certain critical fluence that …

Generation of amorphous surface layers in LiNbO$_3$ by ion-beam irradiation: thresholding and boundary propagation

The refractive-index profiles induced by high-energy (5 MeV, 7.5 MeV) silicon irradiation in LiNbO$_3$ have been systematically determined as a function of ion fluence in the range $10^{13}$–$10^{15}$ cm$^{-2}$. At variance with irradiations at lower …