annealing

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at $1000^\circ$C. Raman and photoluminescence spectra show substantial damage of the …

Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions

We have studied the near-surface damage in a diamond crystal caused by irradiation with swift boron ions and its healing after high-temperature annealing. A diamond crystal was irradiated with 9-MeV $^{11}$B$^{3+}$ ions with fluence values between $1 …

Optical and structural properties of Sb$_2$S$_3$/MgF$_2$ multilayers for laser applications

Multilayers of MgF2 and Sb2S3 have been obtained by physical vapour deposition on glass substrates. Changes in the optical and structural properties have been studied as a function of annealing temperature and the number of layers. A drastic …

Optical and structural properties in the amorphous to polycrystalline transition in Sb$_2$S$_3$ thin films

Sb$_2$S$_3$ thin films have been obtained by physical vapour deposition on LiNbO$_3$ and glass substrates. Films with amorphous structure originally became polycrystalline by annealing in a sulfur atmosphere. Changes in optical and structural …

Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence

A combination of Raman scattering and cathodoluminescence techniques has been used to study the spatial distribution of Te precipitates in the volume of CdTe wafers. Starting with the as‐grown crystals with random distribution of precipitates over …

Elimination of Te Precipitates from CdTe Wafers

Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has been …