# chalcogenide

## Growth of out-of-plane standing MoTe$_{2(1-x)}$Se$_{2x}$/MoSe$_2$ composite flake films by sol-gel nucleation of MoO$_y$ and isothermal closed space telluro-selenization

*Appl. Surf. Sci.* **546**, 149076 (2021)

## Self-organized surface nanopatterns on Cd(Zn)Te crystals induced by medium-energy ion beam sputtering

Cadmium telluride (CT) and Zn-doped approx 4 at%) CT (CZT) crystals grown by the Bridgman method were mechanically polished to achieve mirror-like surfaces and subsequently irradiated with medium-energy (30--200 keV) Ar+ ions under oblique incidence …

## Optical and structural properties of Sb$_2$S$_3$/MgF$_2$ multilayers for laser applications

Multilayers of MgF2 and Sb2S3 have been obtained by physical vapour deposition on glass substrates. Changes in the optical and structural properties have been studied as a function of annealing temperature and the number of layers. A drastic …

## Optical and structural properties in the amorphous to polycrystalline transition in Sb$_2$S$_3$ thin films

Sb$_2$S$_3$ thin films have been obtained by physical vapour deposition on LiNbO$_3$ and glass substrates. Films with amorphous structure originally became polycrystalline by annealing in a sulfur atmosphere. Changes in optical and structural …

## Effect of composition gradient on CuIn$_3$Te$_5$ single crystals properties, micro-Raman and infrared spectroscopies

Several CuIn$_3$Te$_5$ single-crystal samples grown by the vertical Bridgman method have been studied. Changes in composition of the In/Cu atomic ratios in the 3.45–1.88 range have been detected along the ingots by X-ray energy-dispersive analysis. …

## Laser-Assisted Recrystallization to Improve the Surface Morphology of CdTe Epitaxial Layers

Laser-assisted recrystallization has been studied in order to improve the surface morphology of CdTe layers grown on sapphire substrates by metalorganic vapour phase epitaxy (MOVPE). The recrystallization was carried out by scanning the surface of …

## Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence

A combination of Raman scattering and cathodoluminescence techniques has been used to study the spatial distribution of Te precipitates in the volume of CdTe wafers. Starting with the as‐grown crystals with random distribution of precipitates over …

## Elimination of Te Precipitates from CdTe Wafers

Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has been …