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Growth of out-of-plane standing MoTe$_{2(1-x)}$Se$_{2x}$/MoSe$_2$ composite flake films by sol-gel nucleation of MoO$_y$ and isothermal closed space telluro-selenization

This study describes the sol-gel processing of MoO$_y$ on Si (100) to subsequently achieve out-of-plane MoTe$_{2}$/MoSe$_{2}$ flake composite films by an isothermal closed space vapor transformation. The oxide precursor films have been prepared from …

Nanostructural changes upon substitutional Al doping in ZnO sputtered films

Al:ZnO layers, with low and high Al content, 0.2% and 2.1% cat. respectively, have been prepared using the RF magnetron sputtering technique. Noticeable differences in the optical and electrical properties have been detected in these films. With …

Laser heating induced phase changes of VO$_2$ crystals in air monitored by Raman spectroscopy

We have studied the effect of intense visible light on vanadium dioxide crystals in air by measuring micro-Raman spectra for increasing laser powers. A laser wavelength of 632.8 nm was used. For power densities above 500 MW/m2 laser heating triggers …

Flexibilidad nano-estructural y propiedades magnéticas, ópticas y catalíticas en óxidos metálicos multifuncionales (NANOMAGOX)

Investigadores principales: Fernando Agulló-Rueda y Ángel Roberto Landa Cánovas. Organismo financiador: Ministerio de Economía y Competitividad. Referencia: MAT2014-57547-R Centro de ejecución: Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC.

Differences in n-type doping efficiency between Al- and Ga-ZnO films

A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO wurtzite structure is presented. Both cations behave as n-type dopants and their inclusion improves the optical and electrical properties of the ZnO matrix, making …

Flexibilidad micro- y nano-estructural en óxidos mixtos de interés catalítico (FlexOCat)

Investigador principal: Fernando Agulló-Rueda. Organismo financiador: Ministerio de Economía y Competitividad. Referencia: MAT2011-27192. Centro de ejecución: Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC.

Highly conductive Ga-doped ZnO thin films deposited onto Si wafers: Interface characterization

Undoped ZnO and Ga:ZnO films deposited onto Si wafer substrates have been prepared and characterized in order to investigate the suitability of Ga:ZnO as a transparent and conductive material. A comparative study between ZnO and Ga:ZnO properties …

High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering

Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron sputtering onto single crystal Si (100) substrates equivalent to the commercial Si solar cells. The same films were also grown on amorphous silica substrates to complete their …

Giant enhancement of material damage associated to electronic excitation during ion irradiation: The case of LiNbO$_3$

The structural damage induced by ion irradiation on dielectric materials and associated device degradation has been, so far, explained on the basis of collisional processes mostly ignoring the electronic excitation. Recent work, focused on lithium …

Buried amorphous layers by electronic excitation in ion-beam irradiated lithium niobate: structure and kinetics

The formation of buried heavily damaged and amorphous layers by a variety of swift-ion irradiations (F at 22MeV, O at 20MeV, and Mg at 28MeV) on congruent LiNbO$_3$ has been investigated. These irradiations assure that the electronic stopping power …