semiconductors

Lattice-Mismatch Induced Stress in Porous Silicon Films

We have studied the stress in porous silicon films with different porosities at the interface with the substrate. Micro-Raman spectra were measured along a cleaved cross section to sample different layer depths. Each spectrum was fit to the phonon …

Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

We have measured micro-photoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. We find noticeable differences in the spectra of layers with different porosity, as expected …

Determination of Stress in Porous Silicon by Micro-Raman Spectroscopy

We have studied the stress in porous silicon films as a function of depth and porosity using micro-Raman spectroscopy. Raman spectra were measured at different points along a cross section cleaved normal to the layer planes. Each spectrum was fitted …

Laser Heating in Porous Silicon Studied by Micro-Raman Spectroscopy

We have measured the temperature rise in nanoporous silicon under strong illumination. A green laser beam was focused with a microscope objective on porous silicon films with porosities between 55% and 80%. The Raman spectrum was measured for power …

Raman Spectroscopy of NiSe$_2$ and NiS$_{2-x}$Se$_x$ ($0 < x < 2$) Thin Films

The Raman spectra of NiS$_{2-x}$Se$_x$ ($0