thin film

Differences in n-type doping efficiency between Al- and Ga-ZnO films

A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO wurtzite structure is presented. Both cations behave as n-type dopants and their inclusion improves the optical and electrical properties of the ZnO matrix, making …

Highly conductive Ga-doped ZnO thin films deposited onto Si wafers: Interface characterization

Undoped ZnO and Ga:ZnO films deposited onto Si wafer substrates have been prepared and characterized in order to investigate the suitability of Ga:ZnO as a transparent and conductive material. A comparative study between ZnO and Ga:ZnO properties …

High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering

Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron sputtering onto single crystal Si (100) substrates equivalent to the commercial Si solar cells. The same films were also grown on amorphous silica substrates to complete their …

Surface functionalization of materials for high added value applications (FUNCOAT)

Ciencias y Tecnologías de funcionalización de superficies e interfases en materiales de alto valor añadido. Surface functionalization of materials for high added value applications. Proyecto CONSOLIDER-INGENIO 2010

Transition from Amorphous Boron Carbide to Hexagonal Boron Carbon Nitride Thin Films Induced by Nitrogen Ion Assistance

Boron carbon nitride films (BCN) were grown by B$_4$C evaporation under concurrent N$_2$ ion beam assistance. The films were characterized by x-ray absorption near-edge spectroscopy, infrared and Raman spectroscopies, and high-resolution transmission …

Raman Spectroscopy of Wurtzite InN Films Grown on Si

We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550°C. The Raman spectra show well defined peaks at 443, 475, 491 and 591 cm$^{-1}$, which …