Lateral localization in strained InGaAs/GaAs quantum wells

J. Sánchez-Dehesa, F. Agulló-Rueda, J. Martínez-Pastor, A. Vinatieri, F. Meseguer, M. Colocci, R. Mayoral, J. A. Porto, C. López, A. Marti Ceschin, N. Grandjean, J. Massies
January 1994
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in Formation of semiconductor interfaces, B. Lengerer, H. Lüth, W. Mönch, and J. Pollmann, J. (Eds.) (World Scientific, 1994), Vol. , Ch. , pp. 558–561

Full citation
J. D. Moreno, F. Agulló-Rueda, R. Guerrero-Lemus, R. J. Martín-Palma, J. M. Martínez-Duart, M. L. Marcos and J. González-Velasco, “Lateral localization in strained InGaAs/GaAs quantum wells” in Formation of semiconductor interfaces, B. Lengerer, H. Lüth, W. Mönch, and J. Pollmann, J. (Eds.) (World Scientific, 1994), Vol. , Ch. , pp. 558–561. DOI: 10.1142/9789814535113

InGaAs GaAs quantum well strain

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