Isothermal close space sublimation, a simple and low cost physical vapor transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon (PS). The structure of the embedded materials was determined by x-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, it was found a constant composition of the II-VI semiconductors throughout the porous layer down to the substrate. The infiltration of the pores is also verified qualitatively by reflectance measurements. Resonance Raman scattering of the ZnTe samples indicates that this semiconductor grows in nanostructured form inside the pores. Results presented in this paper suggest that Isothermal close-space sublimation (ICSS) is a promising technique for the conformal growth of II-VI semiconductor in porous silicon.