F. Agulló-Rueda
F. Agulló-Rueda
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doping
Nanostructural changes upon substitutional Al doping in ZnO sputtered films
Ceram. Int.
45
, 6319–6327 (2019)
A. R. Landa-Cánovas
,
J. Santiso
,
F. Agulló-Rueda
,
P. Herrero
,
E. Navarrete-Astorga
,
E. Ochoa-Martínez
,
J. R. Ramos-Barrado
,
M. Gabás
Cite
DOI
Differences in n-type doping efficiency between Al- and Ga-ZnO films
A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO wurtzite structure is presented. Both cations …
M. Gabás
,
A. Landa-Cánovas
,
J. L. Costa-Krämer
,
F. Agulló-Rueda
,
A. R. González-Elipe
,
P. Díaz-Carrasco
,
J. Hernández-Moro
,
I. Lorite
,
P. Herrero
,
P. Castillero
,
A. Barranco
,
J. R. Ramos-Barrado
Cite
DOI
Highly conductive Ga-doped ZnO thin films deposited onto Si wafers: Interface characterization
Undoped ZnO and Ga:ZnO films deposited onto Si wafer substrates have been prepared and characterized in order to investigate the …
E. Ochoa
,
M. Gabás
,
S. Bijani
,
S. Palanco
,
A. R. Landa-Cánovas
,
P. Herrero
,
F. Agulló-Rueda
,
P. Díaz-Carrasco
,
J. R. Ramos-Barrado
Cite
DOI
High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering
Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron sputtering onto single crystal Si (100) substrates equivalent to …
M. Gabás
,
P. Díaz-Carrasco
,
F. Agulló-Rueda
,
P. Herrero
,
A. R. Landa-Cánovas
,
J. R. Ramos-Barrado
Cite
DOI
Optical investigation of femtosecond laser induced microstress in neodymium doped lithium niobate crystals
The depth-resolved micromodification of single-crystalline femtosecond laser irradiated Nd$^{3+}$ doped MgO:LiNbO$
3$ crystals is …
A. Ródenas
,
J. A. Sanz García
,
D. Jaque
,
G. Torchia
,
C. Méndez
,
I. Arias
,
L. Roso
,
F. Agulló-Rueda
Cite
DOI
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