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Nanostructural changes upon substitutional Al doping in ZnO sputtered films
Ceram. Int. 45, 6319–6327 (2019)
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Nanostructural changes upon substitutional Al doping in ZnO sputtered films
Characterization of the interface between highly conductive Ga:ZnO films and the silicon substrate
Gallium-doped zinc oxide films are an interesting alternative for transparent conductive materials. To improve their performance, the …
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Characterization of the interface between highly conductive Ga:ZnO films and the silicon substrate
Highly conductive Ga-doped ZnO thin films deposited onto Si wafers: Interface characterization
Undoped ZnO and Ga:ZnO films deposited onto Si wafer substrates have been prepared and characterized in order to investigate the …
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