temperature

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at $1000^\circ$C. Raman and photoluminescence spectra show substantial damage of the …

Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions

We have studied the near-surface damage in a diamond crystal caused by irradiation with swift boron ions and its healing after high-temperature annealing. A diamond crystal was irradiated with 9-MeV $^{11}$B$^{3+}$ ions with fluence values between $1 …

Laser heating induced phase changes of VO$_2$ crystals in air monitored by Raman spectroscopy

We have studied the effect of intense visible light on vanadium dioxide crystals in air by measuring micro-Raman spectra for increasing laser powers. A laser wavelength of 632.8 nm was used. For power densities above 500 MW/m2 laser heating triggers …

Optical and structural properties of Sb$_2$S$_3$/MgF$_2$ multilayers for laser applications

Multilayers of MgF2 and Sb2S3 have been obtained by physical vapour deposition on glass substrates. Changes in the optical and structural properties have been studied as a function of annealing temperature and the number of layers. A drastic …

Optical and structural properties in the amorphous to polycrystalline transition in Sb$_2$S$_3$ thin films

Sb$_2$S$_3$ thin films have been obtained by physical vapour deposition on LiNbO$_3$ and glass substrates. Films with amorphous structure originally became polycrystalline by annealing in a sulfur atmosphere. Changes in optical and structural …

Compositional Study of LiNbO$_3$ Thin Films Grown by Liquid Phase Epitaxy

Lithium niobate (LN) films have been obtained on pure congruent single-domain LN substrates by the liquid phase epitaxy technique. Li-rich flux of LiVO$_3$ has been used. The optimum temperature for the film preparation has been found to be 860°C. …

Laser Heating in Porous Silicon Studied by Micro-Raman Spectroscopy

We have measured the temperature rise in nanoporous silicon under strong illumination. A green laser beam was focused with a microscope objective on porous silicon films with porosities between 55% and 80%. The Raman spectrum was measured for power …

Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

We have measured depth-resolved microphotoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. The PL emission band gets stronger, blueshifts, and narrows at the high porosity …

Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence

A combination of Raman scattering and cathodoluminescence techniques has been used to study the spatial distribution of Te precipitates in the volume of CdTe wafers. Starting with the as‐grown crystals with random distribution of precipitates over …

Elimination of Te Precipitates from CdTe Wafers

Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has been …