ZnO

Nanostructural changes upon substitutional Al doping in ZnO sputtered films

Al:ZnO layers, with low and high Al content, 0.2% and 2.1% cat. respectively, have been prepared using the RF magnetron sputtering technique. Noticeable differences in the optical and electrical properties have been detected in these films. With …

Characterization of the interface between highly conductive Ga:ZnO films and the silicon substrate

Gallium-doped zinc oxide films are an interesting alternative for transparent conductive materials. To improve their performance, the interface between the grown layer and the substrate must be fully understood. Accordingly, ZnO and Ga:ZnO films have …

Differences in n-type doping efficiency between Al- and Ga-ZnO films

A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO wurtzite structure is presented. Both cations behave as n-type dopants and their inclusion improves the optical and electrical properties of the ZnO matrix, making …

Highly conductive Ga-doped ZnO thin films deposited onto Si wafers: Interface characterization

Undoped ZnO and Ga:ZnO films deposited onto Si wafer substrates have been prepared and characterized in order to investigate the suitability of Ga:ZnO as a transparent and conductive material. A comparative study between ZnO and Ga:ZnO properties …

High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering

Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron sputtering onto single crystal Si (100) substrates equivalent to the commercial Si solar cells. The same films were also grown on amorphous silica substrates to complete their …