Abstract
Polypyrrole has been electrocleposited in the interior of the pores that form the Porous Silicon structure, and a very significant increase of the electrical conductivity of the samples has been observed. The degree of filling by the polymer has been found to be highly dependent on the electropolymerization conditions. Micro-Raman Spectroscopy experiments have allowed us to measure the amount of polymer as a function to the distance from the outer PS surface.
Full citation
J. D. Moreno, F. Agulló-Rueda, R. Guerrero-Lemus, R. J. Martín-Palma, J. M. Martínez-Duart, M. L. Marcos and J. González-Velasco,
“Deposition of polypyrrole into porous silicon”
in Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, R. W. Collins, P. M. Fauchet, I. Shimizu, J. C. Vial, T. Shimada, and A. P. Alivisatos, ed. (Materials Research Society, Pittsburgh, 1997).
DOI: 10.1557/PROC-452-479