We have studied the near-surface damage in a diamond crystal caused by irradiation with swift boron ions and its healing after high-temperature annealing. A diamond crystal was irradiated with 9-MeV $^{11}$B$^{3+}$ ions with fluence values between $1 …
Raman measurements on high quality, relaxed InN nanocolumns grown on Si(001) and Si(111) substrates by plasma-assisted molecular beam epitaxy are reported. A coupled LO phonon-plasmon mode around 430 cm-1, together with the uncoupled LO phonon …
Raman measurements in high-quality InN nanocolumns and thin films grown on both Si(1 1 1) and Si(1 0 0) substrates display a low-energy coupled LO phonon–plasmon mode together with uncoupled longitudinal optical (LO) phonons. The coupled mode is …
Raman measurements in high quality InN nanocolumns display a coupled LO phonon-plasmon mode together with uncoupled phonons. The coupled mode is attributed to the spontaneous accumulation of electrons on the lateral surfaces of the nanocolumns. For …
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550°C. The Raman spectra show well defined peaks at 443, 475, 491 and 591 cm$^{-1}$, which …
Photoluminescence ~PL! and Raman spectra were measured along a cross section of porous silicon films at different oxidation times after application of anodic current transients. The average crystallite size was determined from the Raman spectra with …
Oriented single crystals of $R$Fe$_3$(BO$_3$)$_4$, with $R$=La or Nd, have been studied by Raman spectroscopy. Spectra with the relevant polarization configurations have been recorded in order to obtain the symmetry of the observed phonons. The …